ISO 14701:2011
w
ISO 14701:2011
54929

Текущий статус : Отозвано

Это стандарт пересмотренISO 14701:2018

Тезис

ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in the standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

Общая информация

  •  : Отозвано
     : 2011-08
    : Отмена международного стандарта [95.99]
  •  : 1
  • ISO/TC 201/SC 7
    71.040.40 
  • RSS обновления

Жизненный цикл

Появились вопросы?

Ознакомьтесь с FAQ

Работа с клиентами
+41 22 749 08 88

Часы работы:
Понедельник – пятница: 09:00-12:00, 14:00-17:00 (UTC+1)